M. J. Sánchez

activity

19982020

most citedMechanism for bipolar resistive switching in transition metal oxides

202 citations · 405 across the 15 of their papers we have counts for

collaborators

Showing physics.app-phShow all

2 papers · 1 filter

physics.app-ph2020★ 29 cited

On the key role of oxygen vacancies electromigration in the memristive response of ferroelectric devices

C. Ferreyra, M. Rengifo, M. J. Sánchez +3

Ferroelectric memristors are intensively studied due to their potential implementation in data storage and processing devices. In this work we show that the memristive behavior of…

physics.app-ph2019★ 10 cited

Large memcapacitance and memristance at Nb:SrTiO $_{3}$ / La $_{0.5}$ Sr $_{0.5}$ Mn $_{0.5}$ Co $_{0.5}$ O $_{3 - δ}$ Topotactic Redox Interface

W. R. Acevedo, C. A. M. van den Bosch, M. H. Aguirre +7

The possibility to develop neuromorphic computing devices able to mimic the extraordinary data processing capabilities of biological systems spurs the research on memristive system…

On the key role of oxygen vacancies electromigration in the memristive response of ferroelectric devices

Large memcapacitance and memristance at Nb:SrTiO3​ / La0.5​Sr0.5​Mn0.5​Co0.5​O3−δ​ Topotactic Redox Interface

Large memcapacitance and memristance at Nb:SrTiO $_{3}$ / La $_{0.5}$ Sr $_{0.5}$ Mn $_{0.5}$ Co $_{0.5}$ O $_{3 - δ}$ Topotactic Redox Interface