306 citations · 1.8k across the 18 of their papers we have counts for
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Vacuum gauge from ultrathin MoS2 transistor
A. Di Bartolomeo, A. Pelella, A. Grillo +5
We fabricate monolayer MoS2 field effect transistors and study their electric characteristics from 10^-6 Torr to atmospheric air pressure. We show that the threshold voltage of the…
Electron irradiation of metal contacts in monolayer MoS Field-Effect Transistors
A. Pelella, O. Kharsah, A. Grillo +9
This work deals with the electron beam irradiation of the Schottky metal contacts in monolayer molybdenum disulfide (MoS) field-effect transistors (FETs). We show that the expo…
Field emission in ultrathin PdSe2 back-gated transistors
A. Di Bartolomeo, A. Pelella, F. Urban +5
We study the electrical transport in back-gate field-effect transistors with ultrathin palladium diselenide (PdSe2) channel. The devices are normally-on and exhibit dominant n-type…
Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS2 Field Effect Transistors
Filippo Giubileo, Laura Iemmo, Maurizio Passacantando +6
Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to…