28 citations · 81 across the 4 of their papers we have counts for
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A fabrication guide for planar silicon quantum dot heterostructures
Paul C. Spruijtenburg, Sergey V. Amitonov, Wilfred G. van der Wiel +1
We describe important considerations to create top-down fabricated planar quantum dots in silicon, often not discussed in detail in literature. The subtle interplay between intrins…
Palladium gates for reproducible quantum dots in silicon
Matthias Brauns, Sergey V. Amitonov, Paul-Christiaan Spruijtenburg +1
We replace the established aluminium gates for the formation of quantum dots in silicon with gates made from palladium. We study the morphology of both aluminium and palladium gate…
Depletion-mode Quantum Dots in Intrinsic Silicon
Sergey V. Amitonov, Paul C. Spruijtenburg, Max W. S. Vervoort +2
We report the fabrication and electrical characterization of depletion-mode quantum dots in a two-dimensional hole gas (2DHG) in intrinsic silicon. We use fixed charge in a SiO…
Passivation and characterization of charge defects in ambipolar silicon quantum dots
P. C. Spruijtenburg, S. V. Amitonov, F. Mueller +2
In this Report we show the role of charge defects in the context of the formation of electrostatically defined quantum dots. We introduce a barrier array structure to probe defects…