193 citations · 685 across the 20 of their papers we have counts for
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cond-mat.mes-hall2015★ 18 cited
Dual gate black phosphorus velocity modulated transistor
V. Tayari, N. Hemsworth, O. Cyr-Choinière +3
The layered semiconductor black phosphorus has attracted attention as a 2D atomic crystal that can be prepared in ultra-thin layers for operation as field effect transistors. Despi…
cond-mat.mes-hall2015★ 3 cited
Mechanical Flip-Chip for Ultra-High Electron Mobility Devices
K. Bennaceur, B. A. Schmidt, S. Gaucher +6
Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in sel…