36 citations · 79 across the 4 of their papers we have counts for
3 papers · 1 filter
The graphene/n-Ge(110) interface: structure, doping, and electronic properties
Julia Tesch, Fabian Paschke, Mikhail Fonin +10
The implementation of graphene in semiconducting technology requires the precise knowledge about the graphene-semiconductor interface. In our work the structure and electronic prop…
Growth and electronic structure of graphene on semiconducting Ge(110)
Julia Tesch, Elena Voloshina, Mikhail Fonin +1
The direct growth of graphene on semiconducting or insulating substrates might help to overcome main drawbacks of metal-based synthesis, like metal-atom contaminations of graphene,…
Local electronic properties of the graphene-protected giant Rashba-split BiAg surface
Julia Tesch, Elena Voloshina, Milan Jubitz +2
We report the preparation of the interface between graphene and the strong Rashba-split BiAg surface alloy and investigatigation of its structure as well as the electronic prop…