3 citations · 9 across the 12 of their papers we have counts for
Showing 2020 · physics.app-phShow all
2 papers · 2 filters
physics.app-ph2020
Accelerating and Stopping Resistance Drift in Phase Change Memory Cells via High Electric Field Stress
Raihan Sayeed Khan, A. Hasan Talukder, Faruk Dirisaglik +2
We observed resistance drift in 125 K - 300 K temperature range in melt quenched amorphous Ge2Sb2Te5 line-cells with length x width x thickness = ~500 nm x ~100 nm x ~ 50 nm. Drift…
physics.app-ph2020
Resistance Drift in Ge2Sb2Te5 Phase Change Memory Line Cells at Low Temperatures and Its Response to Photoexcitation
Raihan Sayeed Khan, Faruk Dirisaglik, Ali Gokirmak +1
Resistance drift in phase change materials is characterized in amorphous phase change memory line-cells from 300 K to 125 K range and is observed to follow the previously reported…