activity
20172026
most citedPhase Change Logic via Thermal Cross-Talk for Computation in Memory

3 citations · 8 across the 11 of their papers we have counts for

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physics.app-ph2026

Filamentary Transport and Thermoelectric Effects in Mushroom Phase Change Memory Cells

Md Samzid Bin Hafiz, Helena Silva, Ali Gokirmak

We performed a 2D finite-element electrothermal computational study of thermoelectric effects and filamentary electronic transport in GeSbTe mushroom phase change memor…

physics.app-ph2025

Modeling Filamentary Conduction in Reset Phase Change Memory Devices

Md Samzid Bin Hafiz, Helena Silva, Ali Gokirmak

We performed a computational analysis on percolation transport and filament formation in amorphous (a-GST) using 2D finite-element multi-physics simulations with 2 n…

physics.app-ph2024

Electronic transport in amorphous Ge2Sb2Te5 phase-change memory line cells and its response to photoexcitation

A. Talukder, M. Kashem, M. Hafiz +4

We electrically characterized melt-quenched amorphized Ge2Sb2Te5 (GST) phase-change memory cells of 20 nm thickness, ~66-124 nm width and ~100-600 nm length with and without photoe…

physics.app-ph2024

Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures

A B M Hasan Talukder, Md Tashfiq Bin Kashem, Raihan Khan +3

We characterized resistance drift in phase change memory devices in the 80 K to 300 K temperature range by performing measurements on 20 nm thick, ~70-100 nm wide lateral Ge2Sb2Te5…

physics.app-ph20223 cited

Stopping Resistance Drift in Phase Change Memory Cells and Analysis of Charge Transport in Stable Amorphous Ge2Sb2Te5

Md Tashfiq Bin Kashem, Raihan Sayeed Khan, ABM Hasan Talukder +2

We stabilize resistance of melt-quenched amorphous Ge2Sb2Te5 (a-GST) phase change memory (PCM) line cells by substantially accelerating resistance drift and bringing it to a stop w…

physics.app-ph2021

Temperature Dependent Characteristics and Electrostatic Threshold Voltage Tuning of Accumulated Body MOSFETs

A. B. M. Hasan Talukder, Brittany Smith, Mustafa Akbulut +3

Narrow-channel accumulated body nMOSFET devices with p-type side-gates surrounding the active area have been electrically characterized between 100 and 400 K with varied side-gate…