35 citations · 93 across the 17 of their papers we have counts for
17 papers
Filamentary Transport and Thermoelectric Effects in Mushroom Phase Change Memory Cells
Md Samzid Bin Hafiz, Helena Silva, Ali Gokirmak
We performed a 2D finite-element electrothermal computational study of thermoelectric effects and filamentary electronic transport in GeSbTe mushroom phase change memor…
Modeling Filamentary Conduction in Reset Phase Change Memory Devices
Md Samzid Bin Hafiz, Helena Silva, Ali Gokirmak
We performed a computational analysis on percolation transport and filament formation in amorphous (a-GST) using 2D finite-element multi-physics simulations with 2 n…
Electronic transport in amorphous Ge2Sb2Te5 phase-change memory line cells and its response to photoexcitation
A. Talukder, M. Kashem, M. Hafiz +4
We electrically characterized melt-quenched amorphized Ge2Sb2Te5 (GST) phase-change memory cells of 20 nm thickness, ~66-124 nm width and ~100-600 nm length with and without photoe…
Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures
A B M Hasan Talukder, Md Tashfiq Bin Kashem, Raihan Khan +3
We characterized resistance drift in phase change memory devices in the 80 K to 300 K temperature range by performing measurements on 20 nm thick, ~70-100 nm wide lateral Ge2Sb2Te5…
Stopping Resistance Drift in Phase Change Memory Cells and Analysis of Charge Transport in Stable Amorphous Ge2Sb2Te5
Md Tashfiq Bin Kashem, Raihan Sayeed Khan, ABM Hasan Talukder +2
We stabilize resistance of melt-quenched amorphous Ge2Sb2Te5 (a-GST) phase change memory (PCM) line cells by substantially accelerating resistance drift and bringing it to a stop w…
Temperature Dependent Characteristics and Electrostatic Threshold Voltage Tuning of Accumulated Body MOSFETs
A. B. M. Hasan Talukder, Brittany Smith, Mustafa Akbulut +3
Narrow-channel accumulated body nMOSFET devices with p-type side-gates surrounding the active area have been electrically characterized between 100 and 400 K with varied side-gate…
Phase Change Logic via Thermal Cross-Talk for Computation in Memory
Nadim Kanan, Raihan Sayeed Khan, Zachary Woods +2
We have computationally demonstrated logic function implementations using lateral and vertical multi-contact phase change devices integrated with CMOS circuitry, which use thermal…
Scaling of Multi-contact Phase Change Device for Toggle Logic Operations
Raihan Sayeed Khan, Nadim H. Kanan, Jake Scoggin +2
Scaling of two dimensional six-contact phase change devices that can perform toggle logic operations is analyzed through 2D electrothermal simulations with dynamic materials modeli…
Accelerating and Stopping Resistance Drift in Phase Change Memory Cells via High Electric Field Stress
Raihan Sayeed Khan, A. Hasan Talukder, Faruk Dirisaglik +2
We observed resistance drift in 125 K - 300 K temperature range in melt quenched amorphous Ge2Sb2Te5 line-cells with length x width x thickness = ~500 nm x ~100 nm x ~ 50 nm. Drift…
Resistance Drift in Ge2Sb2Te5 Phase Change Memory Line Cells at Low Temperatures and Its Response to Photoexcitation
Raihan Sayeed Khan, Faruk Dirisaglik, Ali Gokirmak +1
Resistance drift in phase change materials is characterized in amorphous phase change memory line-cells from 300 K to 125 K range and is observed to follow the previously reported…
Field Dependent Conductivity and Threshold Switching in Amorphous Chalcogenides -- Modeling and Simulations of Ovonic Threshold Switches and Phase Change Memory Devices
Jake Scoggin, Helena Silva, Ali Gokirmak
We model electrical conductivity in metastable amorphous using independent contributions from temperature and electric field to simulate phase change memory de…
Multi-contact Phase Change Toggle Logic Device Utilizing Thermal Crosstalk
Raihan Sayeed Khan, Nadim H. Kanan, Jake Scoggin +2
Phase change memory (PCM) is an emerging high speed, high density, high endurance, and scalable non-volatile memory technology which utilizes the large resistivity contrast between…
Modeling Heterogeneous Melting in Phase Change Memory Devices
Jake Scoggin, Zachary Woods, Helena Silva +1
We present thermodynamic crystallization and melting models and calculate phase change velocities in based on kinetic and thermodynamic parameters. The calculated…
Activation Energy of Metastable Amorphous Ge2Sb2Te5 from Room Temperature to Melt
S. Muneer, J. Scoggin, F. Dirisaglik +7
Resistivity of metastable amorphous Ge2Sb2Te5 (GST) measured at device level show an exponential decline with temperature matching with the steady-state thin-film resistivity measu…
Intrinsically Reliable and Lightweight Physical Obfuscated Keys
Raihan Sayeed Khan, Nadim Kanan, Chenglu Jin +8
Physical Obfuscated Keys (POKs) allow tamper-resistant storage of random keys based on physical disorder. The output bits of current POK designs need to be first corrected due to m…
Measurement of Wave Chaotic Eigenfunctions in the Time-Reversal Symmetry-Breaking Crossover Regime
Seok-Hwan Chung, Ali Gokirmak, Dong-Ho Wu +4
We present experimental results on eigenfunctions of a wave chaotic system in the continuous crossover regime between time-reversal symmetric and time-reversal symmetry-broken stat…
A Scanned Perturbation Technique For Imaging Electromagnetic Standing Wave Patterns of Microwave Cavities
Ali Gokirmak, Dong-Ho Wu, J. S. A. Bridgewater +1
We have developed a method to measure the electric field standing wave distributions in a microwave resonator using a scanned perturbation technique. Fast and reliable solutions to…