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physics.app-ph2024
Electronic transport in amorphous Ge2Sb2Te5 phase-change memory line cells and its response to photoexcitation
A. Talukder, M. Kashem, M. Hafiz +4
We electrically characterized melt-quenched amorphized Ge2Sb2Te5 (GST) phase-change memory cells of 20 nm thickness, ~66-124 nm width and ~100-600 nm length with and without photoe…
physics.app-ph2024
Resistance Drift in Melt-Quenched Ge2Sb2Te5 Phase Change Memory Line Cells at Cryogenic Temperatures
A B M Hasan Talukder, Md Tashfiq Bin Kashem, Raihan Khan +3
We characterized resistance drift in phase change memory devices in the 80 K to 300 K temperature range by performing measurements on 20 nm thick, ~70-100 nm wide lateral Ge2Sb2Te5…