11 citations · 29 across the 13 of their papers we have counts for
13 papers
Filamentary Transport and Thermoelectric Effects in Mushroom Phase Change Memory Cells
Md Samzid Bin Hafiz, Helena Silva, Ali Gokirmak
We performed a 2D finite-element electrothermal computational study of thermoelectric effects and filamentary electronic transport in GeSbTe mushroom phase change memor…
Stopping Resistance Drift in Phase Change Memory Cells and Analysis of Charge Transport in Stable Amorphous Ge2Sb2Te5
Md Tashfiq Bin Kashem, Raihan Sayeed Khan, ABM Hasan Talukder +2
We stabilize resistance of melt-quenched amorphous Ge2Sb2Te5 (a-GST) phase change memory (PCM) line cells by substantially accelerating resistance drift and bringing it to a stop w…
Temperature Dependent Characteristics and Electrostatic Threshold Voltage Tuning of Accumulated Body MOSFETs
A. B. M. Hasan Talukder, Brittany Smith, Mustafa Akbulut +3
Narrow-channel accumulated body nMOSFET devices with p-type side-gates surrounding the active area have been electrically characterized between 100 and 400 K with varied side-gate…
Phase Change Logic via Thermal Cross-Talk for Computation in Memory
Nadim Kanan, Raihan Sayeed Khan, Zachary Woods +2
We have computationally demonstrated logic function implementations using lateral and vertical multi-contact phase change devices integrated with CMOS circuitry, which use thermal…
Scaling of Multi-contact Phase Change Device for Toggle Logic Operations
Raihan Sayeed Khan, Nadim H. Kanan, Jake Scoggin +2
Scaling of two dimensional six-contact phase change devices that can perform toggle logic operations is analyzed through 2D electrothermal simulations with dynamic materials modeli…
Accelerating and Stopping Resistance Drift in Phase Change Memory Cells via High Electric Field Stress
Raihan Sayeed Khan, A. Hasan Talukder, Faruk Dirisaglik +2
We observed resistance drift in 125 K - 300 K temperature range in melt quenched amorphous Ge2Sb2Te5 line-cells with length x width x thickness = ~500 nm x ~100 nm x ~ 50 nm. Drift…