11 citations · 29 across the 13 of their papers we have counts for
4 papers · 1 filter
Scaling of Multi-contact Phase Change Device for Toggle Logic Operations
Raihan Sayeed Khan, Nadim H. Kanan, Jake Scoggin +2
Scaling of two dimensional six-contact phase change devices that can perform toggle logic operations is analyzed through 2D electrothermal simulations with dynamic materials modeli…
Accelerating and Stopping Resistance Drift in Phase Change Memory Cells via High Electric Field Stress
Raihan Sayeed Khan, A. Hasan Talukder, Faruk Dirisaglik +2
We observed resistance drift in 125 K - 300 K temperature range in melt quenched amorphous Ge2Sb2Te5 line-cells with length x width x thickness = ~500 nm x ~100 nm x ~ 50 nm. Drift…
Chemical segregation in Ge2Sb2Te5 thin films during in-situ heating
Shalini Tripathi, Paul Kotula, Manish Singh +4
Germanium antimony telluride has been the most used and studied phase-change material for electronic memory due to its suitable crystallization temperature, amorphous to crystallin…
Resistance Drift in Ge2Sb2Te5 Phase Change Memory Line Cells at Low Temperatures and Its Response to Photoexcitation
Raihan Sayeed Khan, Faruk Dirisaglik, Ali Gokirmak +1
Resistance drift in phase change materials is characterized in amorphous phase change memory line-cells from 300 K to 125 K range and is observed to follow the previously reported…