3 citations · 8 across the 9 of their papers we have counts for
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Stopping Resistance Drift in Phase Change Memory Cells and Analysis of Charge Transport in Stable Amorphous Ge2Sb2Te5
Md Tashfiq Bin Kashem, Raihan Sayeed Khan, ABM Hasan Talukder +2
We stabilize resistance of melt-quenched amorphous Ge2Sb2Te5 (a-GST) phase change memory (PCM) line cells by substantially accelerating resistance drift and bringing it to a stop w…
Temperature Dependent Characteristics and Electrostatic Threshold Voltage Tuning of Accumulated Body MOSFETs
A. B. M. Hasan Talukder, Brittany Smith, Mustafa Akbulut +3
Narrow-channel accumulated body nMOSFET devices with p-type side-gates surrounding the active area have been electrically characterized between 100 and 400 K with varied side-gate…
Accelerating and Stopping Resistance Drift in Phase Change Memory Cells via High Electric Field Stress
Raihan Sayeed Khan, A. Hasan Talukder, Faruk Dirisaglik +2
We observed resistance drift in 125 K - 300 K temperature range in melt quenched amorphous Ge2Sb2Te5 line-cells with length x width x thickness = ~500 nm x ~100 nm x ~ 50 nm. Drift…
Resistance Drift in Ge2Sb2Te5 Phase Change Memory Line Cells at Low Temperatures and Its Response to Photoexcitation
Raihan Sayeed Khan, Faruk Dirisaglik, Ali Gokirmak +1
Resistance drift in phase change materials is characterized in amorphous phase change memory line-cells from 300 K to 125 K range and is observed to follow the previously reported…
Field Dependent Conductivity and Threshold Switching in Amorphous Chalcogenides -- Modeling and Simulations of Ovonic Threshold Switches and Phase Change Memory Devices
Jake Scoggin, Helena Silva, Ali Gokirmak
We model electrical conductivity in metastable amorphous using independent contributions from temperature and electric field to simulate phase change memory de…