27 citations · 83 across the 8 of their papers we have counts for
8 papers
High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications
Mansour Aouassa, Saud Algarni, Ibrahim Althobaiti +2
This work reports an original method for the fabrication of Metal-Isulator-Semiconductor (MIS) structures with silicon nanocrystals (Si NCs) based active layers embedded in the ins…
Shape relaxation of epitaxial mesa for finite-size strain-engineering
Kennet D. R. Hannikainen, Luc Favre, Fabien Deprat +3
Silicon-Germanium (SiGe) layers are commonly used as stressors in the gate of MOSFET devices. They are expected to introduce a beneficial stress in the drift and channe…
Van der Waals heteroepitaxy of air stable quasi-free standing silicene layers on CVD epitaxial graphene/6H-SiC
Zouhour Ben Jabra, Mathieu Abel, Filippo Fabbri +8
Graphene, consisting of an inert, thermally stable material with an atomically flat, dangling bond-free surface is by essence an ideal template layer for van der Waals heteroepitax…
Self-organized Kagome-lattice in a metal-organic monolayer
Nesrine Shaiek, Hassan Denawi, Mathieu Koudia +7
We report on the successful on-surface synthesis of metal-organic covalent coordination networks with a dense Kagome lattice of metallic centers. In the case of Mn centers ab-initi…
Hydrogen-mediated CVD epitaxy of Graphene on SiC: growth mechanism and atomic configuration
Zouhour Ben Jabra, Isabelle Berbezier, Adrien Michon +7
Despite the large literature focused on the growth of graphene (Gr) on 6H-SiC(0001) by chemical vapour deposition (CVD), some important issues have not been solved and full wafer s…
Role of Quantum Confinement in Luminescence Efficiency of Group IV Nanostructures
E. G. Barbagiovanni, D. J. Lockwood, N. L. Rowell +7
Experimental results obtained previously for the photoluminescence efficiency (PL) of Ge quantum dots (QDs) are theoretically studied. A - plot of PL ve…
Orientation dependence of the elastic instability on strained SiGe films
J. -N. Aqua, A. Gouyé, T. Auphan +3
At low strain, SiGe films on Si substrates undergo a continuous nucleationless morphological evolution known as the Asaro-Tiller-Grinfeld instability. We demonstrate experimentally…
Lattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: effect of Ge concentration and biaxial stress
A. Portavoce, P. Gas, I. Berbezier +3
Si1-xGex/Si1-yGey/Si(100) heterostructures grown by Molecular Beam Epitaxy (MBE) were used in order to study B surface segregation during growth and B lattice diffusion. Ge concent…