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researcher

I. Berbezier

5 papers hereh-index 323.8k citations243 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author4
  • last author1

Across the 5 of 5 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci4
  • physics.app-ph1
same name
  • I. Berbezier — 1 paper, h 1

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

activity
20042022
most citedLattice diffusion and surface segregation of B during growth of SiGe heterostructures by molecular beam epitaxy: effect of Ge concentration and biaxial stress

12 citations · 12 across the 5 of their papers we have counts for

collaborators
Showing physics.app-phShow all

2 papers · 1 filter

physics.app-ph2023★ 27 cited

High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications

Mansour Aouassa, Saud Algarni, Ibrahim Althobaiti +2

This work reports an original method for the fabrication of Metal-Isulator-Semiconductor (MIS) structures with silicon nanocrystals (Si NCs) based active layers embedded in the ins…

physics.app-ph2022

Shape relaxation of epitaxial mesa for finite-size strain-engineering

Kennet D. R. Hannikainen, Luc Favre, Fabien Deprat +3

Silicon-Germanium (Si1−x​Gex​) layers are commonly used as stressors in the gate of MOSFET devices. They are expected to introduce a beneficial stress in the drift and channe…

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