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cond-mat.mtrl-sci2007★ 2 cited
Rotational stacking and its electronic effects on graphene films grown on 4H-SiC
J. Hass, F. Varchon, J. E. Millan-Otoya +6
We examine the stacking order of multilayer graphene grown on the SiC surface using low-energy electron diffraction and surface X-ray diffraction. We show that the fi…
cond-mat.mes-hall2007★ 875 cited
Epitaxial graphene
Walt A. de Heer, Claire Berger, Xiaosong Wu +9
Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to t…