most citedStudy Of Si-Ge Interdiffusion With a High Phosphorus Doping Concentration

17 citations · 19 across the 3 of their papers we have counts for

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cond-mat.mtrl-sci2016★ 2 cited

Study of Black Phosphorus Using Angle-Resolved Polarized Raman Spectroscopy with 442 nm Excitation

Weijun Luo, Qian Song, Guangnan Zhou +2

We investigated 10 to 200 nm thick black phosphorus flakes on SiO2/Si and polyimide substrates by Angle-resolved Polarized Raman spectra (ARPRS) using 442 nm excitation wavelength.…

cond-mat.mtrl-sci2016★ 17 cited

Study Of Si-Ge Interdiffusion With a High Phosphorus Doping Concentration

Feiyang Cai, Dalaver H. Anjum, Xixiang Zhang +2

Si-Ge interdiffusion with a high phosphorus doping level was investigated by both experiments and modeling. Ge/Si1-xGex/Ge multi-layer structures with 0.75<x_Ge<1 , a mid-10^18 to…