17 citations · 19 across the 3 of their papers we have counts for
3 papers
cond-mat.mtrl-sci2016★ 2 cited
Study of Black Phosphorus Using Angle-Resolved Polarized Raman Spectroscopy with 442 nm Excitation
Weijun Luo, Qian Song, Guangnan Zhou +2
We investigated 10 to 200 nm thick black phosphorus flakes on SiO2/Si and polyimide substrates by Angle-resolved Polarized Raman spectra (ARPRS) using 442 nm excitation wavelength.…
physics.optics2016
Stress engineering with silicon nitride stressors for Ge-on-Si lasers
Jiaxin Ke, Lukas Chrostowski, Guangrui Xia
Side and top silicon nitride stressors were proposed and shown to be effective ways to reduce the threshold current Ith and improve the wall-plug efficiency ηwp of Ge-on-Si lasers.…
cond-mat.mtrl-sci2016★ 17 cited
Study Of Si-Ge Interdiffusion With a High Phosphorus Doping Concentration
Feiyang Cai, Dalaver H. Anjum, Xixiang Zhang +2
Si-Ge interdiffusion with a high phosphorus doping level was investigated by both experiments and modeling. Ge/Si1-xGex/Ge multi-layer structures with 0.75<x_Ge<1 , a mid-10^18 to…