50 citations · 91 across the 10 of their papers we have counts for
10 papers
Monolithically integrated 940 nm half VCSELs on bulk Ge substrates
Yunlong Zhao, Jia Guo, Markus Feifel +7
High quality n-type AlGaAs distributed Bragg reflectors (DBRs) and lnGaAs multiple quantum wells were successfully monolithically grown on 4-inch off-cut Ge (100) wafers. The grown…
Sub-10-micron thick Ge thin films from bulk-Ge substrates via a wet etching method
Liming Wang, Guangrui Xia
Low-defect-density Ge thin films are critical in Ge based optical devices (optical detectors, LEDs and Lasers) integrated with Si electronic devices for low-cost, highly integrated…
Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering
Guangnan Zhou, Fanming Zeng, Rongyu Gao +4
We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in MOCVD, which aims at lowering the electric field a…
Formation of Ultra-High-Resistance Au/Ti/p-GaN Junctions and the Applications in AlGaN/GaN HEMTs
Guangnan Zhou, Yang Jiang, Gaiying Yang +5
We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/pGaN Schottky junctions annealed within a certain annealing…
Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-gate-sweep Measurements
Guangnan Zhou, Fanming Zeng, Yang Jiang +5
In this work, we studied the gate breakdown mechanisms of p-GaN gate AlGaN/GaN HEMTs by a novel multiple-gate-sweep-based method. For the first time, three different breakdown mech…
Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs using Metal/Graphene Gates
Guangnan Zhou, Zeyu Wan, Gaiying Yang +5
In this work, single-layer intrinsic and fluorinated graphene were investigated as gate insertion layers in normally-OFF p-GaN gate HEMTs, which wraps around the bottom of the gate…
A Method to Determine Broadband Complex Permittivity of Thin Film Dielectric Materials up to 60 GHz
Liang Wang, Guangrui, Xia +1
This paper describes a method to determine the complex permittivity of a thin dielectric film from finite element analysis and microstrip line measurements. Two transmission line e…
Threshold Voltage Improvement and Leakage Reduction of AlGaN/GaN HEMTs Using Dual-Layer SiNx Stressors
Wei-Chih Cheng, Minghao He, Siqi Lei +9
In this work, AlGaN/GaN HEMTs with dual-layer SiNx stressors (composed of a low-stress layer and a high-stress layer) were investigated. The low-stress padding layer solved the sur…
Oxygen-based digital etching of AlGaN/GaN structures with AlN as etch-stop layers
Jingyi Wu, Siqi Lei, Wei-Chih Cheng +5
O2-plamsa-based digital etching of Al0.25Ga0.75N with a 0.8 nm AlN spacer on GaN was investigated. At 40 W RF bias power and 40 sccm oxygen flow, the etch depth of Al0.25Ga0.75N wa…
Achieving sub-1 Ohm-mm Non-Recess S/D Contact Resistance in GaN HEMTs Utilizing Simple CMOS Compatible La/Ti/Al/Ti Metal Contacts
Xinpeng Lin, Yumeng Zhu, Yongle Qi +10
In this paper, we report the use of lanthanum (La) in S/D contacts of GaN HEMTs, achieving 0.97 Ohm-mm contact resistance without S/D recess. The HEMTs show well-behaved electrical…