2 citations · 5 across the 4 of their papers we have counts for
9 papers
Monolithically integrated 940 nm half VCSELs on bulk Ge substrates
Yunlong Zhao, Jia Guo, Markus Feifel +7
High quality n-type AlGaAs distributed Bragg reflectors (DBRs) and lnGaAs multiple quantum wells were successfully monolithically grown on 4-inch off-cut Ge (100) wafers. The grown…
Sub-10-micron thick Ge thin films from bulk-Ge substrates via a wet etching method
Liming Wang, Guangrui Xia
Low-defect-density Ge thin films are critical in Ge based optical devices (optical detectors, LEDs and Lasers) integrated with Si electronic devices for low-cost, highly integrated…
Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering
Guangnan Zhou, Fanming Zeng, Rongyu Gao +4
We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in MOCVD, which aims at lowering the electric field a…
Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-gate-sweep Measurements
Guangnan Zhou, Fanming Zeng, Yang Jiang +5
In this work, we studied the gate breakdown mechanisms of p-GaN gate AlGaN/GaN HEMTs by a novel multiple-gate-sweep-based method. For the first time, three different breakdown mech…
Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs using Metal/Graphene Gates
Guangnan Zhou, Zeyu Wan, Gaiying Yang +5
In this work, single-layer intrinsic and fluorinated graphene were investigated as gate insertion layers in normally-OFF p-GaN gate HEMTs, which wraps around the bottom of the gate…
A Method to Determine Broadband Complex Permittivity of Thin Film Dielectric Materials up to 60 GHz
Liang Wang, Guangrui, Xia +1
This paper describes a method to determine the complex permittivity of a thin dielectric film from finite element analysis and microstrip line measurements. Two transmission line e…