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cond-mat.mtrl-sci2022
Monolithically integrated 940 nm half VCSELs on bulk Ge substrates
Yunlong Zhao, Jia Guo, Markus Feifel +7
High quality n-type AlGaAs distributed Bragg reflectors (DBRs) and lnGaAs multiple quantum wells were successfully monolithically grown on 4-inch off-cut Ge (100) wafers. The grown…
physics.app-ph2022★ 2 cited
Sub-10-micron thick Ge thin films from bulk-Ge substrates via a wet etching method
Liming Wang, Guangrui Xia
Low-defect-density Ge thin films are critical in Ge based optical devices (optical detectors, LEDs and Lasers) integrated with Si electronic devices for low-cost, highly integrated…