most citedAnnealing shallow Si/SiO interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors

47 citations · 47 across the 1 of their papers we have counts for

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cond-mat.mtrl-sci2016★ 47 cited

Annealing shallow Si/SiO interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors

Jin-Sung Kim, Alexei M. Tyryshkin, Stephen A. Lyon

Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO interface. Here we show that a fo…