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20162020
most citedEffect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors

19 citations · 43 across the 4 of their papers we have counts for

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cond-mat.mtrl-sci2020★ 12 cited

Solubility limit of Ge Dopants in AlGaN: a Chemical and Microstructural Investigation down to the Nanoscale

C. Bougerol, E. Robin, E. Di Russo +5

Attaining low resistivity AlGaN layers is the keystone to improve the efficiency of light emitting devices in the ultraviolet spectral range. Here, we present a microstructural ana…

cond-mat.mtrl-sci2018

Electrical and Optical Properties of Heavily Ge-Doped AlGaN

R. Blasco, A. Ajay, E. Robin +7

We report the effect of germanium as n-type dopant on the electrical and optical properties of AlxGa1-xN layers grown by plasma assisted molecular-beam epitaxy. The Al content has…