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20152024
most citedEffect of the quantum well thickness on the performance of InGaN photovoltaic cells

70 citations · 397 across the 18 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

7 papers · 1 filter

cond-mat.mes-hall2024

MBE-grown virtual substrates for quantum dots emitting in the telecom O- and C-bands

Bianca Scaparra, Elise Sirotti, Akhil Ajay +9

InAs semiconductor quantum dots (QDs) emitting in the near infrared are promising platforms for on-demand single-photon sources and spin-photon interfaces. However, the realization…

cond-mat.mes-hall2020★ 3 cited

Correlated electro-optical and structural study of electrically tunable nanowire quantum dot emitters

Maria Spies, Akhil Ajay, Eva Monroy +2

Quantum dots inserted in semiconducting nanowires are a promising platform for the fabrication of single photon devices. However, it is difficult to fully comprehend the electro-op…

cond-mat.mes-hall2019★ 19 cited

Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors

Maria Spies, Jakub Polaczyński, Akhil Ajay +5

Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are char…

cond-mat.mes-hall2018★ 5 cited

Near- and mid-infrared intersubband absorption in top-down GaN/AlN nano- and micropillars

Jonas Lähnemann, David A. Browne, Akhil Ajay +5

We present a systematic study of top-down processed GaN/AlN heterostructures for intersubband optoelectronic applications. Samples containing quantum well superlattices that displa…

cond-mat.mes-hall2016★ 70 cited

Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

L. Redaelli, A. Mukhtarova, S. Valdueza-Felip +7

We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-ban…

cond-mat.mes-hall2015★ 25 cited

Nonpolar m-plane GaN/AlGaN heterostructures with intersubband transitions in the 5 to 10 THz band

C. B. Lim, A. Ajay, C. Bougerol +6

This paper assesses intersubband transitions in the 1 to 10 THz frequency range in nonpolar m-plane GaN/AlGaN multi-quantum-wells deposited on free-standing semi-insulating GaN sub…

cond-mat.mes-hall2015★ 27 cited

Intersubband transitions in nonpolar GaN/Al(Ga)N heterostructures in the short and mid-wavelength infrared regions

C. B. Lim, M. Beeler, A. Ajay +4

This paper assesses nonpolar m- and a-plane GaN/Al(Ga)N multi-quantum-wells grown on bulk GaN for intersubband optoelectronics in the short- and mid-wavelength infrared ranges. The…