70 citations · 397 across the 18 of their papers we have counts for
18 papers
MBE-grown virtual substrates for quantum dots emitting in the telecom O- and C-bands
Bianca Scaparra, Elise Sirotti, Akhil Ajay +9
InAs semiconductor quantum dots (QDs) emitting in the near infrared are promising platforms for on-demand single-photon sources and spin-photon interfaces. However, the realization…
Ultraviolet Photodetectors based on GaN and AlGaN/AlN Nanowire Ensembles: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture
E. Akar, I. Dimkou, A. Ajay +2
The interest in nanowire photodetectors stems from their potential to improve the performance of a variety of devices, including solar cells, cameras, sensors, and communication sy…
Comparison of the material quality of AlxIn1-xN (x ~ 0-0.50) films deposited on Si (100) and (111) by reactive RF sputtering
M. Sun, R. Blasco, M. de la Mata +5
Here, we compare the material quality of AlxIn1-xN layers deposited on Si with different crystallographic orientations, (100) and (111), via radio-frequency (RF) sputtering. To mod…
Solubility limit of Ge Dopants in AlGaN: a Chemical and Microstructural Investigation down to the Nanoscale
C. Bougerol, E. Robin, E. Di Russo +5
Attaining low resistivity AlGaN layers is the keystone to improve the efficiency of light emitting devices in the ultraviolet spectral range. Here, we present a microstructural ana…
Correlated electro-optical and structural study of electrically tunable nanowire quantum dot emitters
Maria Spies, Akhil Ajay, Eva Monroy +2
Quantum dots inserted in semiconducting nanowires are a promising platform for the fabrication of single photon devices. However, it is difficult to fully comprehend the electro-op…
Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources
I. Dimkou, A. Harikumar, F. Donatini +9
In this paper, we describe the design and characterization of 400-nm-long (88 periods) AlxGa1-xN/AlN (0 < x < 0.1) quantum dot superlattices deposited on self-assembled GaN nanowir…