activity
20162020
most citedEffect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors

19 citations · 31 across the 3 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall20203 cited

Correlated electro-optical and structural study of electrically tunable nanowire quantum dot emitters

Maria Spies, Akhil Ajay, Eva Monroy +2

Quantum dots inserted in semiconducting nanowires are a promising platform for the fabrication of single photon devices. However, it is difficult to fully comprehend the electro-op…

physics.app-ph2019

Assessment of AlGaN/AlN superlattices on GaN nanowires as active region of electron-pumped ultraviolet sources

I. Dimkou, A. Harikumar, F. Donatini +9

In this paper, we describe the design and characterization of 400-nm-long (88 periods) AlxGa1-xN/AlN (0 < x < 0.1) quantum dot superlattices deposited on self-assembled GaN nanowir…

cond-mat.mes-hall201919 cited

Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors

Maria Spies, Jakub Polaczyński, Akhil Ajay +5

Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are char…

physics.app-ph20199 cited

Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures

Caroline B. Lim, Akhil Ajay, Jonas Lähnemann +2

This paper assesses the effects of Ge-doping on the structural and optical (band-to-band and intersubband (ISB)) properties of GaN/AlGaN multi-quantum wells (QWs) designed to displ…

cond-mat.mes-hall2016

Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

L. Redaelli, A. Mukhtarova, S. Valdueza-Felip +7

We report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-ban…