42 citations · 42 across the 1 of their papers we have counts for
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Quasi-free-standing single-layer WS2 achieved by intercalation
Sanjoy K. Mahatha, Maciej Dendzik, Charlotte E. Sanders +4
Large-area and high-quality single-layer transition metal dichalcogenides can be synthesized by epitaxial growth on single-crystal substrates. An important advantage of this approa…
Influence of an anomalous temperature-dependence of the phase coherence length on the conductivity of magnetic topological insulators
V. Tkáč, K. Výborný, V. Komanický +14
Magnetotransport constitutes a useful probe to understand the interplay between electronic band topology and magnetism in spintronics devices based on topological materials. A rece…
Growth and Structure of Singly-Oriented Single-Layer Tungsten Disulfide on Au(111)
Luca Bignardi, Daniel Lizzit, Harsh Bana +14
We present a complete characterisation at the nanoscale of the growth and structure of single-layer tungsten disulfide (WS) epitaxially grown on Au(111). Following the growth p…
Epitaxial Growth of Single-Orientation High-Quality MoS Monolayers
Harsh Bana, Elisabetta Travaglia, Luca Bignardi +16
We present a study on the growth and characterization of high-quality single-layer MoS with a single orientation, i.e. without the presence of mirror domains. This single orien…
Contact-Induced Semiconductor-to-Metal Transition in Single-Layer WS
Maciej Dendzik, Albert Bruix, Matteo Michiardi +6
Low-resistance ohmic contacts are a challenge for electronic devices based on two-dimensional materials. We show that an atomically precise junction between a two-dimensional semic…
Band gap engineering by Bi intercalation of graphene on Ir(111)
Jonas Warmuth, Albert Bruix, Matteo Michiardi +7
We report on the structural and electronic properties of a single bismuth layer intercalated underneath a graphene layer grown on an Ir(111) single crystal. Scanning tunneling micr…