23 citations · 23 across the 4 of their papers we have counts for
4 papers
Cross-sectional scanning tunneling microscopy of InAs/GaAs(001) submonolayer quantum dots
R. S. R. Gajjela, A. L. Hendriks, A. Alzeidan +3
Cross-sectional scanning tunneling microscopy (X-STM) was employed to characterize the InAs submonolayer quantum dots (SMLQDs) grown on top of a Si-doped GaAs(001) substrate in the…
Strain field of InAs QDs on GaAs (001) substrate surface: characterization by synchrotron X-ray Renninger scanning
S. L. Morelhão, L. H. Avanci, R. Freitas +1
Precise lattice parameter measurements in single crystals are achievable, in principle, by X-ray multiple diffraction (MD) experiments. Tiny sample misalignments can compromise sys…
On the high accuracy lattice-parameters determination by n-beam diffraction: Theory and application to the InAs quantum dots grown over GaAs(001) substrate system
L. H. Avanci, A. A. Quivy, S. L. Morelhao +1
Ultra-precise lattice parameter measurements in single crystals are achievable, in principle, by X-ray multiple diffraction (XMD) experiments. Tiny sample misalignments have hinder…
Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields
R. F. Oliveira, A. B. Henriques, T. E. Lamas +2
We have studied a 50/50Åsuperlattice of GaAs/AlGaAs composition, modulation-doped with Si, to produce cm electrons per superlattice p…