Measurement of miniband parameters of a doped superlattice by photoluminescence in high magnetic fields

Abstract

We have studied a 50/50Åsuperlattice of GaAs/Al${}_{0.21}$Ga${}_{0.79}$As composition, modulation-doped with Si, to produce $n=1.4\times 10^{12}$ cm${}^{-2}$ electrons per superlattice period. The modulation-doping was tailored to avoid the formation of Tamm states, and photoluminescence due to interband transitions from extended superlattice states was detected. By studying the effects of a quantizing magnetic field on the superlattice photoluminescence, the miniband energy width, the reduced effective mass of the electron-hole pair, and the band gap renormalization could be deduced.

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