activity
20092024
most citedMeasurement of the Spin Relaxation Time of Single Electrons in a Silicon MOS-Based Quantum Dot

125 citations · 571 across the 15 of their papers we have counts for

collaborators
Showing 2018Show all

5 papers · 1 filter

cond-mat.mes-hall2018★ 72 cited

Engineering long spin coherence times of spin-orbit systems

T. Kobayashi, J. Salfi, J. van der Heijden +12

Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photo…

cond-mat.mes-hall2018★ 63 cited

Single-shot single-gate RF spin readout in silicon

P. Pakkiam, A. V. Timofeev, M. G. House +5

For solid-state spin qubits, single-gate RF readout can help minimise the number of gates required for scale-up to many qubits since the readout sensor can integrate into the exist…

cond-mat.mes-hall2018★ 72 cited

Two-Electron Spin Correlations in Precision Placed Donors in Silicon

M. A. Broome, S. K. Gorman, M. G. House +8

Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges o…

cond-mat.mes-hall2018★ 48 cited

Addressable electron spin resonance using donors and donor molecules in silicon

Samuel J. Hile, Lukas Fricke, Matthew G. House +8

Phosphorus donor impurities in silicon are a promising candidate for solid-state quantum computing due to their exceptionally long coherence times and high fidelities. However, ind…

cond-mat.mes-hall2018★ 2 cited

Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot

S. K. Gorman, M. A. Broome, M. G. House +6

We measure singlet-triplet mixing in a precision fabricated double donor dot comprising of 2 and 1 phosphorus atoms separated by nm. We identify singlet and triplet-minu…