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20092024
most citedMeasurement of the Spin Relaxation Time of Single Electrons in a Silicon MOS-Based Quantum Dot

125 citations · 571 across the 15 of their papers we have counts for

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cond-mat.mes-hall2009★ 125 cited

Measurement of the Spin Relaxation Time of Single Electrons in a Silicon MOS-Based Quantum Dot

M. Xiao, M. G. House, H. W. Jiang

We report on measurements of the spin relaxation time T1 of individual electron spins in the few electron regime of a Si/SiO2-based quantum dot (QD). Energy-spectroscopy of the QD…