815 citations · 3.4k across the 27 of their papers we have counts for
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cond-mat.mes-hall2010★ 10 cited
Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density regime
Laurens H. Willems van Beveren, Kuan Y. Tan, Nai-Shyan Lai +2
We report the fabrication and study of Hall bar MOSFET devices in which an overlapping-gate architecture allows four-terminal measurements of low-density 2D electron systems, while…
cond-mat.mes-hall2010★ 794 cited
Single-shot readout of an electron spin in silicon
Andrea Morello, Jarryd J. Pla, Floris A. Zwanenburg +12
The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for th…