815 citations · 3.4k across the 27 of their papers we have counts for
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cond-mat.mes-hall2011
Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime
Laurens H. Willems Van Beveren, Kuan Y. Tan, Nai-Shyan Lai +3
A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high co…
quant-ph2011★ 39 cited
Single-electron shuttle based on a silicon quantum dot
K. W. Chan, M. Mottonen, A. Kemppinen +4
We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/Si…