354 citations · 1.4k across the 12 of their papers we have counts for
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Observation of anisotropic interlayer Raman modes in few-layer ReS2
Philipp Nagler, Gerd Plechinger, Christian Schüller +1
ReS has recently emerged as a new member in the rapidly growing family of two-dimensional materials. Unlike MoS or WSe, the optical and electrical properties of ReS…
Control of biaxial strain in single-layer Molybdenite using local thermal expansion of the substrate
G. Plechinger, A. Castellanos-Gomez, M. Buscema +6
Single-layer MoS2 is a direct-gap semiconductor whose electronic band structure strongly depends on the strain applied to its crystal lattice. While uniaxial strain can be easily a…
Optical spectroscopy of interlayer coupling in artificially stacked MoS2 layers
G. Plechinger, F. Mooshammer, A. Castellanos-Gomez +3
We perform an optical spectroscopy study to investigate the properties of different artificial MoS bi- and trilayer stacks created from individual monolayers by a deterministic…
Identification of excitons, trions and biexcitons in single-layer WS2
Gerd Plechinger, Philipp Nagler, Julia Kraus +4
Single-layer WS is a direct-gap semiconductor showing strong excitonic photoluminescence features in the visible spectral range. Here, we present temperature-dependent photolum…