344 citations · 1k across the 9 of their papers we have counts for
7 papers · 1 filter
Large Electron Concentration Modulation using Capacitance Enhancement in SrTiO3/SmTiO3 FinFETs
Amit Verma, Kazuki Nomoto, Wan Sik Hwang +3
Solid-state modulation of 2-dimensional electron gases (2DEGs) with extreme (~3.3 x 1014 cm-2) densities corresponding to 1/2 electron per interface unit cell at complex oxide hete…
Synthesized multiwall MoS2 nanotube and nanoribbon field-effect transistors
Sara Fathipour, Maja Remskar, Ana Varlec +8
We report on the fabrication and characterization of synthesized multiwall MoS2 nanotube (NT) and nanoribbon (NR) field-effect transistors (FETs). The MoS2 NTs and NRs were grown b…
High-Voltage Field Effect Transistors with Wide-Bandgap β-Ga2O3 Nanomembranes
Wan Sik Hwang, Amit Verma, Hartwin Peelaers +11
Nanoscale semiconductor materials have been extensively investigated as the channel materials of transistors for energy-efficient low-power logic switches to enable scaling to smal…
Graphene Nanoribbon Field-Effect Transistors on Wafer-Scale Epitaxial Graphene on SiC substrates
Wan Sik Hwang, Pei Zhao, Kristof Tahy +11
We report the realization of top-gated graphene nanoribbon field effect transistors (GNRFETs) of ~10 nm width on large-area epitaxial graphene exhibiting the opening of a band gap…
Comparative Study of Chemically Synthesized and Exfoliated Multilayer MoS2 Field-Effect Transistors
Wan Sik Hwang, Maja Remskar, Rusen Yan +8
We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobili…
Transport Properties of Graphene Nanoribbon Transistors on Transport Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition Grown Wafer-Scale Graphene
Wan Sik Hwang, Kristof Tahy, Xuesong Li +5
Graphene nanoribbon (GNR) field-effect transistors (FETs) with widths down to 12 nm have been fabricated by electron beam lithography using a wafer-scale chemical vapor deposition…
Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior
Wan Sik Hwang, Maja Remskar, Rusen Yan +9
We report the realization of field-effect transistors (FETs) made with chemically- synthesized layered two dimensional (2D) crystal semiconductor WS2. The 2D Schottky-barrier FETs…