238 citations · 1.2k across the 18 of their papers we have counts for
12 papers · 1 filter
Improved Hopfield Network Optimization using Manufacturable Three-terminal Electronic Synapses
Su-in Yi, Suhas Kumar, R. Stanley Williams
We describe via simulation novel optimization algorithms for a Hopfield neural network constructed using manufacturable three-terminal Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) s…
Universal phase dynamics in VO2 switches revealed by ultrafast operando diffraction
Aditya Sood, Xiaozhe Shen, Yin Shi +9
Strongly correlated materials that exhibit an insulator-metal transition are key candidates in the search for new computing platforms. Understanding the pathways and timescales und…
Size scaling, dynamics, and electro-thermal bifurcation of VO2 Mott oscillators
Stephanie M. Bohaichuk, Suhas Kumar, Miguel Muñoz Rojo +7
Traditional electronic devices are well-known to improve in speed and energy-efficiency as their dimensions are reduced to the nanoscale. However, this scaling behavior remains unc…
Oxygen migration during resistance switching and failure of hafnium oxide memristors
Suhas Kumar, Ziwen Wang, Xiaopeng Huang +7
While the recent establishment of the role of thermophoresis/diffusion-driven oxygen migration during resistance switching in metal oxide memristors provided critical insights requ…
Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors
Suhas Kumar, Noraica Davila, Ziwen Wang +6
We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 μW) and energy (<200 fJ/bit/μm2), low read-power (~nW), and high endur…
Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors
Suhas Kumar, Ziwen Wang, Xiaopeng Huang +7
Transition metal oxide memristors, or resistive random-access memory (RRAM) switches, are under intense development for storage-class memory because of their favorable operating po…