122 citations · 328 across the 5 of their papers we have counts for
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cond-mat.mtrl-sci2016★ 2 cited
Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures
U. Jahn, M. Musolino, J. Lähnemann +8
Several ten m GaN have been deposited on a silicon substrate using a two-step hydride vapor phase epitaxy (HVPE) process. The substrates have been covered by AlN layers and GaN…
cond-mat.mtrl-sci2014★ 122 cited
Luminescence associated with stacking faults in GaN
Jonas Lähnemann, Uwe Jahn, Oliver Brandt +3
Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matri…
cond-mat.mtrl-sci2012★ 119 cited
Direct experimental determination of the spontaneous polarization of GaN
Jonas Lähnemann, Oliver Brandt, Uwe Jahn +8
We present a universal approach for determining the spontaneous polarization Psp of a wurtzite semiconductor from the emission energies of excitons bound to the different types of…