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cond-mat.mes-hall2016★ 16 cited
Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)
Carsten Pfüller, Pierre Corfdir, Christian Hauswald +9
We investigate the 3.45-eV luminescence band of spontaneously formed GaN nanowires on Si(111) by photoluminescence and cathodoluminescence spectroscopy. This band is found to be pa…
cond-mat.mes-hall2012★ 69 cited
Macro- and micro-strain in GaN nanowires on Si(111)
Bernd Jenichen, Oliver Brandt, Carsten Pfueller +3
We analyze the strain state of GaN nanowire ensembles by x-ray diffraction. The nanowires are grown by molecular beam epitaxy on a Si(111) substrate in a self-organized manner. On…