16 citations · 16 across the 1 of their papers we have counts for
2 papers
cond-mat.mes-hall2016★ 16 cited
Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)
Carsten Pfüller, Pierre Corfdir, Christian Hauswald +9
We investigate the 3.45-eV luminescence band of spontaneously formed GaN nanowires on Si(111) by photoluminescence and cathodoluminescence spectroscopy. This band is found to be pa…
cond-mat.mtrl-sci2016
Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures
U. Jahn, M. Musolino, J. Lähnemann +8
Several ten m GaN have been deposited on a silicon substrate using a two-step hydride vapor phase epitaxy (HVPE) process. The substrates have been covered by AlN layers and GaN…