122 citations · 328 across the 5 of their papers we have counts for
5 papers
Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)
Carsten Pfüller, Pierre Corfdir, Christian Hauswald +9
We investigate the 3.45-eV luminescence band of spontaneously formed GaN nanowires on Si(111) by photoluminescence and cathodoluminescence spectroscopy. This band is found to be pa…
Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures
U. Jahn, M. Musolino, J. Lähnemann +8
Several ten m GaN have been deposited on a silicon substrate using a two-step hydride vapor phase epitaxy (HVPE) process. The substrates have been covered by AlN layers and GaN…
Luminescence associated with stacking faults in GaN
Jonas Lähnemann, Uwe Jahn, Oliver Brandt +3
Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matri…
Macro- and micro-strain in GaN nanowires on Si(111)
Bernd Jenichen, Oliver Brandt, Carsten Pfueller +3
We analyze the strain state of GaN nanowire ensembles by x-ray diffraction. The nanowires are grown by molecular beam epitaxy on a Si(111) substrate in a self-organized manner. On…
Direct experimental determination of the spontaneous polarization of GaN
Jonas Lähnemann, Oliver Brandt, Uwe Jahn +8
We present a universal approach for determining the spontaneous polarization Psp of a wurtzite semiconductor from the emission energies of excitons bound to the different types of…