16 citations · 17 across the 9 of their papers we have counts for
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Investigating Transient Characteristics of Volatile Hysteresis and Self-Heating of PrMnO based RRAM
J. Sakhuja, S. Lashkare, K. Jana +1
PrMnO (PMO) based RRAM shows selector-less behavior due to high-non-linearity. Recently, the non-linearity, along with volatile hysteresis, is demonstrated and utilized as a co…
Reaction-Drift Model for Switching Transients in PrCaMnO-Based Resistive RAM
Vivek Saraswat, Shankar Prasad, Abhishek Khanna +5
PrCaMnO (PCMO) based RRAM shows promising memory properties like non-volatility, low variability, multiple resistance states and scalability. From a modeling pe…
Understanding the Location of Resistance Change in the Pr0.7Ca0.3MnO3 RRAM
Sandip Lashkare, Udayan Ganguly
Pr1-xCaxMnO3 (PCMO) based resistance random access memory (RRAM) is attractive in large scale memory and neuromorphic applications as it is non-filamentary, area scalable and has m…
Transient Phenomena in Sub-Band Gap Impact Ionization in Si NIPIN Diode
Bhaskar Das, J. Schulze, Udayan Ganguly
Sub-band-gap (SBG) impact ionization (II) enables steep subthreshold slope that enables devices to overcome the thermal limit of 60mV/decade. This phenomenon at low voltage enables…