U. Ganguly

activity

20162021

most citedReaction-Drift Model for Switching Transients in Pr

_{0.7}

_{0.3}

MnO

_{3}

-Based Resistive RAM

16 citations · 17 across the 9 of their papers we have counts for

collaborators

Showing cond-mat.mtrl-sciShow all

2 papers · 1 filter

cond-mat.mtrl-sci2023

Evolution of ferroelectricity with annealing temperature and thickness in sputter deposited undoped HfO $_{2}$ on silicon

Md Hanif Ali, Adityanarayan Pandey, Rowtu Srinu +4

Ferroelectricity in sputtered undoped-HfO $_{2}$ is attractive for composition control for low power and non-volatile memory and logic applications. Unlike doped HfO $_{2}$ , evolution of…

cond-mat.mtrl-sci2016

Space Charge Limited Current with Self-heating in Pr $_{0.7}$ Ca $_{0.3}$ MnO $_{3}$ based RRAM

I. Chakraborty, N. Panwar, A. Khanna +1

Space Charge Limited Current (SCLC) based conduction has been identified for PCMO-based RRAM devices based on the observation that $I \propto V^{α}$ where $α \approx 2$ . A critical fe…

Evolution of ferroelectricity with annealing temperature and thickness in sputter deposited undoped HfO2​ on silicon

Space Charge Limited Current with Self-heating in Pr0.7​Ca0.3​MnO3​ based RRAM

Evolution of ferroelectricity with annealing temperature and thickness in sputter deposited undoped HfO $_{2}$ on silicon

Space Charge Limited Current with Self-heating in Pr $_{0.7}$ Ca $_{0.3}$ MnO $_{3}$ based RRAM