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cond-mat.mtrl-sci2021
Low Resistance III-V Hetero-contacts to N-Ge
Junkyo Suh, Pranav Ramesh, Andrew C. Meng +6
We experimentally study III-V/Ge heterostructure and demonstrate InGaAs hetero-contacts to n-Ge with a wide range of In % and achieve low contact resistivity () of $5\times10^…
cond-mat.mtrl-sci2021★ 6 cited
Statistical Analysis of Contacts to Synthetic Monolayer MoS2
Aravindh Kumar, Alvin Tang, H. -S. Philip Wong +1
Two-dimensional (2D) semiconductors are promising candidates for scaled transistors because they are immune to mobility degradation at the monolayer limit. However, sub-10 nm scali…