activity
20162021
most citedIsolation and Characterization of Few-layer Manganese Thiophosphite

121 citations · 250 across the 5 of their papers we have counts for

collaborators

8 papers

cond-mat.mtrl-sci2021★ 51 cited

Bridging the gap between atomically thin semiconductors and metal leads

Xiangbin Cai, Zefei Wu, Xu Han +15

Electrically interfacing atomically thin transition metal dichalcogenide semiconductors (TMDSCs) with metal leads is challenging because of undesired interface barriers, which have…

cond-mat.mes-hall2017★ 121 cited

Isolation and Characterization of Few-layer Manganese Thiophosphite

Gen Long, Ting Zhang, Xiangbin Cai +12

This work reports an experimental study on an antiferromagnetic honeycomb lattice of MnPS that couples the valley degree of freedom to a macroscopic antiferromagnetic order. Th…

cond-mat.mes-hall2017

Quantum Transport in Ambipolar Few-layer Black Phosphorus

Gen Long, Denis Maryenko, Sergio Pezzini +10

Few-layer black phosphorus possesses unique electronic properties giving rise to distinct quantum phenomena and thus offers a fertile platform to explore the emergent correlation p…

cond-mat.mes-hall2017

Gate-tunable strong-weak localization transition in few-layer black phosphorus

Gen Long, Shuigang Xu, Xiangbin Cai +8

Atomically thin black phosphorus (BP) field-effect transistors show strong-weak localization transition which is tunable through gate voltages. Hopping transports through charge im…

cond-mat.mes-hall2017★ 52 cited

Odd-integer quantum Hall states and giant spin susceptibility in p-type few-layer WSe2

Shuigang Xu, Junying Shen, Gen Long +17

We fabricate high-mobility p-type few-layer WSe2 field-effect transistors and surprisingly observe a series of quantum Hall (QH) states following an unconventional sequence predomi…

cond-mat.mes-hall2016★ 5 cited

Charge Density Wave Phase Transition on the Surface of Electrostatically Doped Multilayer Graphene

Gen Long, Shuigang Xu, Ting Zhang +6

We demonstrate that charge density wave (CDW) phase transition occurs on the surface of electronically doped multilayer graphene when the Fermi level approaches the M points (also…