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Probing the Electronic States in Black Phosphorus Vertical Heterostructures
Xiaolong Chen, Lin Wang, Yingying Wu +14
Atomically thin black phosphorus (BP) is a promising two-dimensional material for fabricating electronic and optoelectronic nano-devices with high mobility and tunable bandgap stru…
Fast Transfer-free Synthesis of High-quality Monolayer Graphene on Insulating Substrates by Simple Rapid Thermal Treatment
Zefei Wu, Yanqing Guo, Yuzheng Guo +13
The transfer-free synthesis of high-quality, large-area graphene on a given dielectric substrate, which is highly desirable for device applications, remains a significant challenge…
Universal low-temperature Ohmic contacts for quantum transport in transition metal dichalcogenides
Shuigang Xu, Zefei Wu, Huanhuan Lu +14
Low carrier mobility and high electrical contact resistance are two major obstacles prohibiting explorations of quantum transport in TMDCs. Here, we demonstrate an effective method…
Detection of Interlayer Interaction in Few-layer Graphene through Landau Level Spectroscopy
Zefei Wu, Yu Han, Wei Zhu +12
We demonstrate that surface relaxation, which is insignificant in trilayer graphene, starts to manifest in Bernal-stacked tetralayer graphene. Bernal-stacked few-layer graphene has…
Probing the Electron States and Metal-Insulator Transition Mechanisms in Atomically Thin MoS2 Based on Vertical Heterostructures
Xiaolong Chen, Zefei Wu, Shuigang Xu +12
The metal-insulator transition (MIT) is one of the remarkable electrical transport properties of atomically thin molybdenum disulphide (MoS2). Although the theory of electron-elect…
Hopping Transport through Defect-induced Localized States in Molybdenum Disulfide
Hao Qiu, Tao Xu, Zilu Wang +12
Molybdenum disulfide is a novel two-dimensional semiconductor with potential applications in electronic and optoelectronic devices. However, the nature of charge transport in back-…