activity
20102023
most citedSurface States Engineering of Metal/MoS2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability

54 citations · 332 across the 18 of their papers we have counts for

collaborators

18 papers

physics.app-ph2023

Large electro-opto-mechanical coupling in VO2 neuristors

Upanya Khandelwal, Rama Satya Sandilya, Rajeev Kumar Rai +8

Biological neurons are electro-mechanical systems, where the generation and propagation of an action potential is coupled to generation and transmission of an acoustic wave. Neuris…

q-bio.NC2022★ 1 cited

Self-assembled neuromorphic networks at self-organized criticality in Ag-hBN platform

Ankit Rao, Sooraj Sanjay, Majid Ahmadi +5

Networks and systems which exhibit brain-like behavior can analyze information from intrinsically noisy and unstructured data with very low power consumption. Such characteristics…

cond-mat.mtrl-sci2017★ 39 cited

Thickness Dependent Parasitic Channel Formation at AlN/Si Interfaces

Hareesh Chandrasekar, K N Bhat, Muralidharan Rangarajan +2

The performance of GaN-on-Silicon electronic devices is severely degraded by the presence of a parasitic conduction pathway at the nitride-substrate interface which contributes to…

cond-mat.mtrl-sci2017★ 1 cited

Dielectric Engineering of HfO2 Gate Stacks Towards Normally-ON and Normally-OFF GaN HEMTs on Silicon

Hareesh Chandrasekar, Sandeep Kumar, K. L. Ganapathi +9

We report on the interfacial electronic properties of HfO2 gate dielectrics both, with GaN towards normally-OFF recessed HEMT architectures and the AlGaN barrier for normally-ON Al…

cond-mat.mtrl-sci2017★ 26 cited

An Early In-Situ Stress Signature of the AlN-Si Pre-growth Interface for Successful Integration of Nitrides with (111) Si

Hareesh Chandrasekar, Nagaboopathy Mohan, Abheek Bardhan +4

The integration of MOCVD grown group III-A nitride device stacks on Si (111) substrates is critically dependent on the quality of the first AlN buffer layer grown. A Si surface tha…

cond-mat.mes-hall2016★ 45 cited

Photoresponse of atomically thin MoS2 layers and their planar heterojunctions

Sangeeth Kallatt, Govindarao Umesh, Navakanta Bhat +1

MoS2 monolayers exhibit excellent light absorption and large thermoelectric power, which are, however, accompanied with very strong exciton binding energy - resulting in complex ph…