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20102023
most citedSurface States Engineering of Metal/MoS2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability

54 citations · 332 across the 18 of their papers we have counts for

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9 papers · 1 filter

cond-mat.mes-hall2016★ 45 cited

Photoresponse of atomically thin MoS2 layers and their planar heterojunctions

Sangeeth Kallatt, Govindarao Umesh, Navakanta Bhat +1

MoS2 monolayers exhibit excellent light absorption and large thermoelectric power, which are, however, accompanied with very strong exciton binding energy - resulting in complex ph…

cond-mat.mes-hall2015★ 54 cited

Surface States Engineering of Metal/MoS2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability

Shubhadeep Bhattacharjee, Kolla Lakshmi Ganapathi, Digbijoy N. Nath +1

Variability and lack of control in the nature of contacts between metal/MoS2 interface is a major bottleneck in the realisation of high-performance devices based on layered materia…

cond-mat.mes-hall2011★ 11 cited

Underlap Optimization in HFinFET in Presence of Interface Traps

Kausik Majumdar, Rajaram S. Konjady, Raj Tejas S. +1

In this work, using 3D device simulation, we perform an extensive gate to source/drain underlap optimization for the recently proposed hybrid transistor, HFinFET, to show that the…

cond-mat.mes-hall2011★ 6 cited

High On-Off Ratio Bilayer Graphene Complementary Field Effect Transistors

Kausik Majumdar, Kota V. R. M. Murali, Navakanta Bhat +2

In this paper, we propose a novel S/D engineering for dual-gated Bilayer Graphene (BLG) Field Effect Transistor (FET) using doped semiconductors (with a bandgap) as source and drai…

cond-mat.mes-hall2010★ 25 cited

External Bias Dependent Direct To Indirect Bandgap Transition in Graphene Nanoribbon

Kausik Majumdar, Kota V. R. M. Murali, Navakanta Bhat +1

In this work, using self-consistent tight-binding calculations, for the first time, we show that a direct to indirect bandgap transition is possible in an armchair graphene nanorib…

cond-mat.mes-hall2010★ 13 cited

Effects of Parasitics and Interface Traps On Ballistic Nanowire FET In The Ultimate Quantum Capacitance Limit

Kausik Majumdar, Navakanta Bhat, Prashant Majhi +1

In this paper, we focus on the performance of a nanowire Field Effect Transistor (FET) in the Ultimate Quantum Capacitance Limit (UQCL) (where only one subband is occupied) in the…