activity
20102023
most citedSurface States Engineering of Metal/MoS2 Contacts Using Sulfur Treatment for Reduced Contact Resistance and Variability

54 citations · 332 across the 18 of their papers we have counts for

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Showing 2010Show all

5 papers · 1 filter

cond-mat.mes-hall2010★ 25 cited

External Bias Dependent Direct To Indirect Bandgap Transition in Graphene Nanoribbon

Kausik Majumdar, Kota V. R. M. Murali, Navakanta Bhat +1

In this work, using self-consistent tight-binding calculations, for the first time, we show that a direct to indirect bandgap transition is possible in an armchair graphene nanorib…

cond-mat.mes-hall2010★ 13 cited

Effects of Parasitics and Interface Traps On Ballistic Nanowire FET In The Ultimate Quantum Capacitance Limit

Kausik Majumdar, Navakanta Bhat, Prashant Majhi +1

In this paper, we focus on the performance of a nanowire Field Effect Transistor (FET) in the Ultimate Quantum Capacitance Limit (UQCL) (where only one subband is occupied) in the…

cond-mat.mes-hall2010★ 26 cited

Bandstructure Effects in Ultra-Thin-Body DGFET: A Fullband Analysis

Kausik Majumdar, Navakanta Bhat

This paper discusses a few unique effects of ultra-thin-body double-gate NMOSFET that are arising from the bandstructure of the thin film Si channel. The bandstructure has been cal…

cond-mat.mes-hall2010★ 22 cited

HFinFET: A Scalable, High Performance, Low Leakage Hybrid N-Channel FET

Kausik Majumdar, Prashant Majhi, Navakanta Bhat +1

In this letter we propose the design and simulation study of a novel transistor, called HFinFET, which is a hybrid of a HEMT and a FinFET, to obtain excellent performance and good…

cond-mat.mes-hall2010★ 8 cited

Intrinsic Limits of Subthreshold Slope in Biased Bilayer Graphene Transistor

Kausik Majumdar, Kota V. R. M. Murali, Navakanta Bhat +1

In this work, we investigate the intrinsic limits of subthreshold slope in a dual gated bilayer graphene transistor using a coupled self-consistent Poisson-bandstructure solver. We…