activity
20122018
most citedManifestation of unexpected semiconducting properties in few-layer orthorhombic arsenene

131 citations · 357 across the 12 of their papers we have counts for

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Showing cond-mat.mes-hallShow all

5 papers · 1 filter

cond-mat.mes-hall2016

Graphene Electronic Structure in Charge Density Waves

John M. Vail, Oscar J. Hernandez, Ming-Su Si +1

We introduce the idea that the electronic band structure of a charge density wave system may mimic the electronic structure of graphene. In that case a class of materials quite dif…

cond-mat.mes-hall2016★ 15 cited

Band gap modulation in γ-graphyne by p-n codoping

Xiaohui Deng, Jing Zeng, Mingsu Si +1

The modulation of band gap in the two-dimensional carbon materials is of impor- tance for their applications as electronic devices. By first-principles calculations, we propose a m…

cond-mat.mes-hall2016★ 2 cited

The mechanism and process of spontaneous boron doping in graphene in the theoretical perspective

Xiaohui Deng, Jing Zeng, Mingsu Si +1

A theoretical model is presented to reveal the mechanism of B doping into graphene in the microwave plasma experiment choosing trimethylboron as the doping source (ACS NANO 6 (2012…

cond-mat.mes-hall2015★ 1 cited

Orientation and strain modulated electronic structures in puckered arsenene nanoribbons

Z. Y. Zhang, H. N. Cao, J. C. Zhang +3

Orthorhombic arsenene was recently predicted as an indirect bandgap semiconductor. Here, we demonstrate that nanostructuring arsenene into nanoribbons can successfully transform th…

cond-mat.mes-hall2012★ 6 cited

g-B3N3C: a novel two-dimensional graphite-like material

Jinyun Li, Daqiang Gao, Xiaoning Niu +2

A novel crystalline structure of hybrid monolayer hexagonal boron nitride (BN) and graphene is predicted by means of the first-principles calculations. This material can be derived…