Manifestation of unexpected semiconducting properties in few-layer orthorhombic arsenene

Abstract

In this express, we demonstrate few-layer orthorhombic arsenene is an ideal semiconductor. Due to the layer stacking, multilayer arsenenes always behave as intrinsic direct bandgap semiconductors with gap values of around 1 eV. In addition, these bandgaps can be further tuned in its nanoribbons. Based on the so-called acoustic phonon limited approach, the carrier mobilities are predicted to approach as high as several thousand square centimeters per volt-second and simultaneously exhibit high directional anisotropy. All these make few-layer arsenene promising for device applications in semiconducting industry.

arXiv admin note: text overlap with arXiv:1401.5045 by other authors

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• Highly Anistoropic Thermal Conductivity of Arsenene: An ab initio Study
• Two Dimensional Allotropes of Arsenene with Wide Range of High and Anisotropic Carrier Mobility
• Parameterization of Stillinger-Weber Potential for Two-Dimensional Atomic Crystals
• Structural Transition in Layered As${}_{\text{1-x}}$P${}_{\text{x}}$ Compounds: A Computational Study
• Four allotropes of semiconducting layered Arsenic which switch into a topological insulator via an electric field: A computational study
• A First-Principles Study on the Adsorption of Small Molecules on Arsenene: Comparison of Oxidation Kinetics in Arsenene, Antimonene, Phosphorene and InSe
• Theoretical investigation of electron-hole complexes in anisotropic two-dimensional materials
• Layer-dependence of dielectric response and water-enhanced ambient degradation of highly-anisotropic black As
• Electronic and transport properties of anisotropic semiconductor quantum wires
• Tunable electronic and magneto-optical properties of monolayer arsenene from GW approximation to large-scale tight-binding simulations
• Toward improved property prediction of 2D materials using many-body quantum Monte Carlo methods