317 citations · 485 across the 13 of their papers we have counts for
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physics.app-ph2019★ 10 cited
Multi-bit MRAM storage cells utilizing serially connected perpendicular magnetic tunnel junctions
Piotr Rzeszut, Witold Skowroński, Sławomir Ziętek +2
Serial connection of multiple memory cells using perpendicular magnetic tunnel junctions (pMTJ) is proposed as a way to increase magnetic random access memory (MRAM) storage densit…
physics.app-ph2017★ 317 cited
Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance
Mengxing Wang, Wenlong Cai, Kaihua Cao +11
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, s…