activity
20112021
most citedCurrent-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance

317 citations · 485 across the 13 of their papers we have counts for

collaborators
Showing cond-mat.mes-hallShow all

7 papers · 1 filter

cond-mat.mes-hall2021★ 10 cited

Size-dependent enhancement of passive microwave rectification in magnetic tunnel junctions with perpendicular magnetic anisotropy

A. Sidi El Valli, V. Iurchuk, G. Lezier +11

Spintronic rf detectors were demonstrated, recently, for energy harvesting and wireless communication at low input power. Here we report on the optimization of the rectified output…

cond-mat.mes-hall2019★ 5 cited

CoFeB/MgO/CoFeB structures with orthogonal easy axes: perpendicular anisotropy and damping

H. Głowiński, A. Żywczak, J. Wrona +4

We report on the Gilbert damping parameter , the effective magnetization , and the asymmetry of the -factor in bottom-CoFeB(0.93~nm)/MgO(0.90--1.25~nm)/CoFeB(1.31~…

cond-mat.mes-hall2016

Influence of intermixing at the Ta/CoFeB interface on spin Hall angle in Ta/CoFeB/MgO heterostructures

Monika Cecot, Lukasz Karwacki, Witold Skowronski +7

We investigate the spin Hall effect in perpendicularly magnetized Ta/Co40Fe40B20/MgO trilayers with Ta underlayers thicker than the spin diffusion length. The crystallographic stru…

cond-mat.mes-hall2015

Buffer influence on magnetic dead layer, critical current and thermal stability in magnetic tunnel junctions with perpendicular magnetic anisotropy

Marek Frankowski, Antoni Żywczak, Maciej Czapkiewicz +11

We present a thorough research on Ta/Ru-based buffers and their influence on features crucial from the point of view of applications of MTJs, such as critical switching current and…

cond-mat.mes-hall2014★ 28 cited

Spin-torque diode radio-frequency detector with voltage tuned resonance

Witold Skowroński, Marek Frankowski, Jerzy Wrona +3

We report on a voltage tunable radio-frequency (RF) detector based on a magnetic tunnel junction (MTJ). The spin-torque diode effect is used to excite and/or detect RF oscillations…

cond-mat.mes-hall2013★ 22 cited

Influence of MgO tunnel barrier thickness on spin-transfer ferromagnetic resonance and torque in magnetic tunnel junctions

Witold Skowroński, Maciej Czapkiewicz, Marek Frankowski +6

Spin-transfer ferromagnetic resonance (ST-FMR) in symmetric magnetic tunnel junctions (MTJs) with a varied thickness of the MgO tunnel barrier (0.75 nm < < 1.05 nm) is st…

cond-mat.mes-hall2011★ 18 cited

Inductive determination of the optimum tunnel barrier thickness in magnetic tunnelling junction stacks for spin torque memory applications

Santiago Serrano-Guisan, Witold Skowronski, Jerzy Wrona +5

We use pulsed inductive microwave magnetometry to study the precessional magnetization dynamics of the free layer in CoFeB/MgO/CoFeB based magnetic tunnelling junction stacks with…