100 citations · 288 across the 22 of their papers we have counts for
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Reflection high-energy electron diffraction and scanning tunneling microscopy study of InP(001) surface reconstructions
V. P. LaBella, Z. Ding, D. W. Bullock +2
The reconstructions of the InP(001) surface prepared by molecular beam epitaxy have been studied with in situ reflection high-energy electron diffraction (RHEED) and scanning tunne…
Time-evolution of the GaAs(0 0 1) pre-roughening process
Z. Ding, D. W. Bullock, P. M. Thibado +2
The GaAs(0 0 1) surface is observed to evolve from being perfectly flat to a surface half covered with one-monolayer high spontaneously formed GaAs islands. The dynamics of this pr…
Electron-beam evaporated cobalt films on molecular beam epitaxy prepared GaAs(001)
Z. Ding, P. M. Thibado, C. Awo-Affouda +1
We have deposited Co films on the GaAs(001) surface by using an e-beam evaporation method. The thicknesses of the Co films are measured by using x-ray reflectivity and Rutherford b…
Electrical and optical studies of GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy
J. F. Xu, S. W. Liu, M. Xiao +1
GaMnAs/GaAs films were grown via molecular beam epitaxy using both low and high substrate temperatures. The films were investigated using Hall effect and photoluminescence (PL) mea…
Atmospheric oxygen in Mn doped GaAs/GaAs(0 0 1) thin films grown by molecular beam epitaxy
J. F. Xu, P. M. Thibado, C. Awo-Affouda +2
Mn doped GaAs thin films were grown using molecular beam epitaxy at high and low substrate temperatures. The elemental concentration depth profiles in the thin films were determine…
Anomalous Mn depth profiles for GaMnAs/GaAs(001) thin films grown by molecular beam epitaxy
J. F. Xu, P. M. Thibado, C. Awo-Affouda +2
Mn concentration depth profiles in Mn-doped GaAs thin films grown at substrate temperatures of 580 and 250 °C using various Mn cell temperatures have been investigated with dynamic…