activity
20142021
most citedTiS3 transistors with tailored morphology and electrical properties

218 citations · 1.4k across the 17 of their papers we have counts for

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5 papers · 1 filter

cond-mat.mes-hall2017★ 28 cited

Dielectrophoretic assembly of liquid-phase-exfoliated TiS3 nanoribbons for photodetecting applications

R. Frisenda, E. Giovanelli, P. Mishra +8

Liquid-phase-exfoliation is a technique capable of producing large quantities of two-dimensional material in suspension. Despite many efforts in the optimization of the exfoliation…

cond-mat.mes-hall2017★ 66 cited

High current density electrical breakdown of TiS3 nanoribbon-based field-effect transistors

Aday J. Molina-Mendoza, Joshua O. Island, Wendel S. Paz +11

The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible app…

cond-mat.mes-hall2015★ 100 cited

Temperature dependent Raman spectroscopy of titanium trisulfide (TiS3) nanoribbons and nanosheets

Amit S. Pawbake, Joshua O. Island, Eduardo Flores +7

Titanium trisulfide (TiS3) has recently attracted the interest of the 2D community as it presents a direct bandgap of ~1.0 eV, shows remarkable photoresponse, and has a predicted c…

cond-mat.mes-hall2015★ 76 cited

Electronic bandgap and exciton binding energy of layered semiconductor TiS3

Aday J. Molina-Mendoza, Mariam Barawi, Robert Biele +8

We present a study of the electronic and optical bandgap in layered TiS3, an almost unexplored semiconductor that has attracted recent attention because of its large carrier mobili…

cond-mat.mes-hall2014★ 204 cited

Ultrahigh photoresponse of few-layer TiS3 nanoribbon transistors

Joshua O. Island, Michele Buscema, Mariam Barawi +7

Here, we isolate thin TiS3 ribbons, a layered direct band gap semiconductor (1.1 eV, well suited for detection all across the visible spectrum), thus far almost unexplored. We fabr…